january 2009 FDP10N50F / fdpf10n 50ft n-channel mosfet ?2009 fairchild semiconductor corporation FDP10N50F / fdpf10n50ft rev. a www.fairchildsemi.com 1 unifet tm FDP10N50F / fdpf10n50ft n-channel mosfet 500v, 9a, 0.85 features ?r ds(on) = 0.71 ( typ.) @ v gs = 10v, i d = 4.5a ? low gate charge ( typ. 18nc) ? low c rss ( typ. 10pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transis- tors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advance technology has been especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effi- cient switching mode power supplies and active power factor correction. d g s to-220f fdpf series g s d to-220 fdp series g d s mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FDP10N50F fdpf10n50ft units v dss drain to source voltage 500 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 9 9* a -continuous (t c = 100 o c) 5.4 5.4* i dm drain current - pulsed (note 1) 36 36* a e as single pulsed avalanche energy (note 2) 364 mj i ar avalanche current (note 1) 9 a e ar repetitive avalanche energy (note 1) 12.5 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns p d power dissipation (t c = 25 o c) 125 42 w - derate above 25 o c1.00.33w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDP10N50F fdpf10n50ft units r jc thermal resistance, junction to case 1.0 3.0 o c/w r ja thermal resistance, junction to ambient 62.5 62.5 *drain current limited by maximum junction temperature
FDP10N50F / fdpf10n 50ft n-channel mosfet FDP10N50F / fdpf10n50ft rev. a www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDP10N50F FDP10N50F to-220 - - 50 fdpf10n50ft fdpf10n50ft to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 500 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.5-v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 10 a v ds = 400v, t c = 125 o c - - 100 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 4.5a - 0.71 0.85 g fs forward transconductance v ds = 20v, i d = 4.5a (note 4) -8.5-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 880 1170 pf c oss output capacitance - 120 160 pf c rss reverse transfer capacitance - 10 15 pf q g total gate charge at 10v v ds = 400v, i d = 10a v gs = 10v (note 4, 5) -1824nc q gs gate to source gate charge - 5 - nc q gd gate to drain ?miller? charge - 7.5 - nc t d(on) turn-on delay time v dd = 250v, i d = 10a r g = 25 (note 4, 5) -2050ns t r turn-on rise time - 40 90 ns t d(off) turn-off delay time - 45 100 ns t f turn-off fall time - 30 70 ns i s maximum continuous drain to source diode forward current - - 9 a i sm maximum pulsed drain to source diode forward current - - 60 a v sd drain to source diode forward voltage v gs = 0v, i sd = 9a - - 1.5 v t rr reverse recovery time v gs = 0v, i sd = 9a di f /dt = 100a/ s (note 4) -95-ns q rr reverse recovery charge - 0.2 - c notes: 1: repetitive rating: pulse width limited by maximum junction temperature 2: l = 9mh, i as = 9a, v dd = 50v, r g = 25 , starting t j = 25c 3: i sd 8a, di/dt 200a/ s, v dd bv dss , starting t j = 25c 4: pulse test: pulse width 300 s, duty cycle 2% 5: essentially independent of operating temperature typical characteristics
FDP10N50F / fdpf10n 50ft n-channel mosfet FDP10N50F / fdpf10n50ft rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 0.1 1 10 20 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 12.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 246810 0.1 1 10 30 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 0 4 8 121620 0.6 0.8 1.0 1.2 1.4 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.0 0.4 0.8 1.2 1.6 0.1 1 10 30 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 110 30 0 500 1000 1500 2000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 4 8 12 16 20 0 2 4 6 8 10 *note: i d = 10a v ds = 100v v ds = 250v v ds = 400v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDP10N50F / fdpf10n 50ft n-channel mosfet FDP10N50F / fdpf10n50ft rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. maximum safe operating area vs. temperature - fdpf10n50ft figure 9. maximum drain current vs. case temperature figure 10. transient thermal response curve - fdpf10n50ft -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] 1 10 100 1000 0.01 0.1 1 10 50 dc 10ms 1ms 100 s 20 s *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse operation in this area is limited by r ds(on) i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 11010 2 0.005 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.0 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] 5 t 1 p dm t 2
FDP10N50F / fdpf10n 50ft n-channel mosfet FDP10N50F / fdpf10n50ft rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDP10N50F / fdpf10n 50ft n-channel mosfet FDP10N50F / fdpf10n50ft rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body d iode forw ard voltage d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate pulse w idth gate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body d iode forw ard voltage d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate pulse w idth gate pulse period -------------------------- d = g ate pulse w idth gate pulse period --------------------------
FDP10N50F / fdpf10n 50ft n-channel mosfet FDP10N50F / fdpf10n50ft rev. a www.fairchildsemi.com 7 mechanical dimensions to-220
FDP10N50F / fdpf10n 50ft n-channel mosfet FDP10N50F / fdpf10n50ft rev. a www.fairchildsemi.com 8 package dimensions dimensions in millimeters to-220f potted * front/back side isolation voltage : 2700v
FDP10N50F / fdpf10n 50ft n-channel mosfet FDP10N50F / fdpf10n50ft rev. a www.fairchildsemi.com 9 rev. i38 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life su pport device or system, or to affect its safety or effectiveness. product status definitions definition of terms build it now? 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